Silicon Drift Detectors for High Resolution, High Count Rate X-ray Spectroscopy at Room Temperature

نویسندگان

  • P. Lechner
  • C. Fiorini
  • Lutz
  • H. Soltau
  • L. Strüder
چکیده

Silicon Drift Detectors (SDDs) consist of a fully depleted volume in which an electric field drives signal charges to a small sized anode. Due to their topology SDDs combine a large sensitive area with a small output capacitance. In an advanced SDD version for X-ray spectroscopy designed and fabricated at the MPI semiconductor laboratory the input transistor of the amplifying electronics has been integrated on the detector chip. That way the overall capacitance of the detector-amplifier system is minimized, guaranteeing excellent energy resolution and high count rate capability. The elaborated process technology used in the SDD fabrication stands for a low leakage current level allowing for operation at or close to room temperature.

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تاریخ انتشار 2003